characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 11.5a) zero gate voltage drain current (v ds = 1000v, v gs = 0v) zero gate voltage drain current (v ds = 800v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) 050-7039 rev d 2-2009 maximum ratings all ratings: t c = 25c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms a na volts min typ max 1000 23 0.4 6 250 1000 100 35 apt10045 1000 2392 3040 565 4.52 -55 to 150 300 2350 2500 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com t-max ? g d s to-264 b2fll lfll apt10045b2fll * apt10045lfll * 1000v 23a 0.4 ? ? ? lower input capacitance ? increased power dissipation ? lower miller capacitance ? easier to drive ? lower gate charge, qg ? popular t-max? or to-264 package ? fast recovery body diode power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. power mos 7 r fredfet downloaded from: http:///
050-7039 rev d 2-2009 dynamic characteristics apt10045b2fll - lfll source-drain diode ratings and characteristics thermal characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -23a) peak diode recovery dv / dt 5 reverse recovery time(i s = -23a, di / dt = 100a/s) reverse recovery charge(i s = -23a, di / dt = 100a/s) peak recovery current(i s = -23a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 2392 1.3 18 t j = 25c 340 t j = 125c 640 t j = 25c 1.78 t j = 125c 4.47 t j = 25c 11.4 t j = 125c 16.4 symbol r jc r ja min typ max 0.22 40 unitc/w characteristicjunction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 9.45mh, r g = 25 , peak i l = 23a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 23a di / dt 700a/s v r v dss t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain (" miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 500v i d = 23a @ 25c resistive switching v gs = 15v v dd = 500v i d = 23a @ 25c r g = 0.6 inductive switching @ 25c v dd = 670v, v gs = 15v i d = 23a, r g = 5 inductive switching @ 125c v dd = 670v v gs = 15v i d = 23a, r g = 5 min typ max 4350 715120 154 2697 10 5 30 8 639380 1046 451 unit pf nc ns j note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.250.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.90.05 downloaded from: http:///
r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 5 10 15 20 25 30 0 2 4 6 8 10 0 10 20 30 40 50 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 8070 60 50 40 30 20 10 0 2520 15 10 50 2.52.0 1.5 1.0 0.5 0.0 6050 40 30 20 10 0 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 050-7039 rev d 2-2009 5.5v 6v 6.5v 7v 5v v gs =15 & 8v v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model fi gure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature apt10045b2fll - lfll typical performance curves normalized to v gs = 10v @ 11.5a i d = 11.5a v gs = 10v 0.08930.0842 0.0485 0.0102f0.106f 0.979f power (watts) junction temp. ( c) rc model case temperature downloaded from: http:///
typical performance curves 050-7039 rev d 2-2009 pt10045b2fll - lfll c rss c iss c oss v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage 20,00010,000 1,000 100 10 200100 10 1 v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 1000 0 10 20 30 40 50 0 50 100 150 200 250 0.3 0.5 0.7 0.9 1.1 1.3 1.5 9250 10 1 1612 84 0 t c =+25c t j =+150c single pulse operation here limited by r ds (on) 10ms 1ms 100s v ds =500v v ds =200v v ds =800v i d = 23a t j =+150c t j =+25c i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 670v r g = 5 t j = 125c l = 100 h t d(on) t d(off) e on e off e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 01 02 03 04 0 01 02 0 3 04 0 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 45 50 160140 120 100 8060 40 20 0 20001500 1000 500 0 6050 40 30 20 10 0 40003500 3000 2500 2000 1500 1000 500 0 v dd = 670v r g = 5 t j = 125c l = 100 h v dd = 670v r g = 5 t j = 125 c l = 100 h e on includes diode reverse recovery. v dd = 670v i d = 23a t j = 125c l = 100 h e on includes diode reverse recovery. downloaded from: http:///
15.49 (.610)?16.26 (.640) 5.38 (.212)?6.20 (.244) 4.50 (.177) max. 19.81 (.780)?20.32 (.800) 20.80 (.819)?21.46 (.845) 1.65 (.065)?2.13 (.084) 1.01 (.040)?1.40 (.055) 5.45 (.215) bsc 2.87 (.113)?3.12 (.123) 4.69 (.185)?5.31 (.209) 1.49 (.059)? 2.49 (.098) 2.21 (.087)?2.59 (.102) 0.40 (.016)?0.79 (.031) drain source gate these dimensions are equal to the to-247 without the mounting hole. drain 2-plcs. 19.51 (.768)?20.50 (.807) 19.81 (.780)?21.39 (.842) 25.48 (1.003)?26.49 (1.043) 2.29 (.090)?2.69 (.106) 0.76 (.030)?1.30 (.051) 3.10 (.122)?3.48 (.137) 4.60 (.181)?5.21 (.205) 1.80 (.071)? 2.01 (.079) 2.59 (.102)? 3.00 (.118) 0.48 (.019)?0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090)?2.69 (.106) 5.79 (.228)?6.20 (.244) 2.79 (.110)?3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) t-max tm (b2) package outline to-264 (l) package outline apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,5225,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign p atents. us and foreign pat ents pending. all rights reserved. apt10045b2fll - lfll 90% t d(off) t j = 125 c drain current drain voltage gate voltage 10% 0 90% t f switching energy 10 % t d(on) 90% 5 % t r 10 % 5 % switching energy gate voltage t j = 125 c drain current drain voltage figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions i c d.u.t. apt15df120b v ce figure 20, inductive switching test circuit g v dd 050-7039 rev d 2-2009 downloaded from: http:///
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